features trenchfet power mosfet 175 c junction temperature pwm optimized applications dc/dc primary side switch sup60n10-16l vishay siliconix document number: 71928 s-03600?rev. b, 31-mar-03 www.vishay.com 1 n-channel 100-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 100 0.016 @ v gs = 10 v 60 100 0.018 @ v gs = 4.5 v 56 d g s n-channel mosfet to-220ab top view gds drain connected to tab sup60n10-16l absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 60 continuous drain current (t j = 175 c) t c = 125 c i d 35 a pulsed drain current i dm 100 a avalanche current i ar 40 repetitive a valanche energy a l = 0.1 mh e ar 80 mj maximum power dissipation a t c = 25 c p d 150 b w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (free air) r thja 62.5 c/w junction-to-case r thjc 1.0 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
sup60n10-16l vishay siliconix www.vishay.com 2 document number: 71928 s-03600?rev. b, 31-mar-03 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 100 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 80 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 80 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 100 a v gs = 10 v, i d = 30 a 0.0125 0.016 drain - source on - state resistance a r ds(on) v gs = 4.5 v, i d = 20 a 0.014 0.018 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.030 v gs = 10 v, i d = 30 a, t j = 175 c 0.040 forward transconductance a g fs v ds = 15 v, i d = 30 a 25 s dynamic b input capacitance c iss 3820 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 450 pf reverse transfer capacitance c rss 210 total gate charge c q g 73 110 gate-source charge c q gs v ds = 50 v, v gs = 10 v, i d = 60 a 15 nc gate-drain charge c q gd ds , gs , d 20 gate resistance r g 1.5 turn-on delay time c t d(on) 12 25 rise time c t r v dd = 50 v, r l = 0.83 90 135 ns turn-off delay time c t d(off) v dd = 50 v , r l = 0 . 83 i d 60 a, v gen = 10 v, r g = 2.5 55 85 ns fall time c t f 130 195 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 60 a pulsed current i sm 100 a forward voltage a v sd i f = 60 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 62 100 ns peak reverse recovery current i rm(rec) i f = 50 a, di/dt = 100 a/ s 3.1 5 a reverse recovery charge q rr f , 0.10 0.25 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup60n10-16l vishay siliconix document number: 71928 s-03600?rev. b, 31-mar-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 1000 2000 3000 4000 5000 6000 0 20406080100 0 2 4 6 8 10 0 1020304050607080 0 40 80 120 160 0 102030405060708090 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 30 60 90 120 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - transconductance (s) g fs 25 c -55 c 3 v t c = 125 c v ds = 50 v i d = 60 a v gs = 10 thru 6 v v gs = 10 v c iss c oss t c = - 55 c 25 c 125 c 4 v v gs = 4.5 v - on-resistance ( r ds(on) ) - drain current (a) i d i d - drain current (a) 5 v c rss
sup60n10-16l vishay siliconix www.vishay.com 4 document number: 71928 s-03600?rev. b, 31-mar-03 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) - on-resistance ( r ds(on) ) 0 95 100 105 110 115 120 125 130 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) (v) v (br)dss i d = 10 ma
sup60n10-16l vishay siliconix document number: 71928 s-03600?rev. b, 31-mar-03 www.vishay.com 5 thermal ratings 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 1000 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c - ambient temperature ( c) - drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 - drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s 1 100 10 -4 single pulse 0.05 0.02
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